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Phys.org

Internet / Phys.org

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A silicon carbide transistor that operates at 600

For more than two decades, silicon carbide (SiC) has been promoted as the key to developing extreme-environment electronics. Yet despite its promise, the field has remained stuck at the stage of basic research, failing to result in the development of practical devices. Now, a team of researchers at Kyoto University has set out to change that.

24 Aug 2026 5:50 pm